The Nanofabrication and Scanning Electron Microscope laboratory operates:
1) A RAITH e-LINE Plus electron microscope and electron lithography system (EBL), accessible for electron microscopy and nanolithography, which allows the writing of high-resolution nanostructures together with standard SEM imaging. The Schottky type thermal field emission (TFE) electron source has a beam energy selectable between 100 eV – 30 keV and a spotsize smaller than 2 nm. This EBL device is equipped with Everhart-Thornley secondary, in-lens secondary and backscattered electron detectors and a rotation and tilt module for samples of 10 x 10 mm2. The available X-ray spectrometer and energy dispersive microanalysis system allows qualitative and quantitative composition analysis. The device is equipped with a 20 MHz pattern generator and fast electrostatic beam blanker allowing the production of nanopatterns with a minimum grating periodicity ≤ 40 nm and a minimum feature size ≤ 8 nm. Sample positioning is ensured by a 100 x 100 mm travel range laser interferometer-controlled stage. For nanofabrication the whole lift-off technological chain is available with a plasma cleaner, spin coater, fume-hood, hotplate, ultrasonic bath and metallization.
2) A Scios 2 HiVac electron microscope and focused ion-beam device (FIB), accessible for imaging and nanofabrication. The Ga source allows the milling of thin film cross-sections, direct writing of nanopatterns and preparation of TEM lamellae. The Schottky type thermal field emission (TFE) electron source has a beam energy selectable between 200 eV – 30 keV. The Ga source operates between 500V and 30 kV and the beam current can be adjusted between 1.5 pA and 65 nA. The FIB device is equipped with a Pt gas-injection system and a nano-manipulator. It is also equipped with Everhart-Thornley secondary, in-lens secondary and backscattered electron detectors; the sample holder can be rotated between -15° and 90° and tilted by 0 to 360°. A scanning TEM detector is also available for imaging FIB-prepared cross sections with a transmitted beam.
EDX analysis (point and map analysis)
TEM lamellae preparation